Darlington Silicon
Power Transistors
. . . designed for generalpurpose amplifier and low speed
switching applications.
High DC Current Gain --
hFE = 3500 (Typ) @ IC = 4 Adc
CollectorEmitter Sustaining Voltage -- @ 200 mAdc
VCEO(sus) = 60 Vdc (Min) -- 2N6667
= 80 Vdc (Min) -- 2N6668
Low CollectorEmitter Saturation Voltage --
VCE(sat) = 2 Vdc (Max)@ IC = 5 Adc
Monolithic Construction with BuiltIn BaseEmitter Shunt Resistors
TO220AB Compact Package
Complementary to 2N6387, 2N6388
COLLECTOR
EMITTER
[ 8 k
[ 120
Figure 1. Darlington Schematic
BASE
MAXIMUM RATINGS (1)
Rating
Symbol
2N6667
2N6668
Unit
CollectorEmitter Voltage
VCEO
60
80
Vdc
CollectorBase Voltage
VCB
60
80
Vdc
EmitterBase Voltage
VEB
5
Vdc
Collector Current -- Continuous
-- Peak
IC
10
15
Adc
Base Current
IB
250
mAdc
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
PD
65
0.52
watts
W/
_
C
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
PD
2
0.016
Watts
W/
_
C
Operating and Storage Junction Temperature Range
TJ, Tstg
65 to +150
_
C
(1) Indicates JEDEC Registered Data.
ON Semiconductor
)
Semiconductor Components Industries, LLC, 2002
April, 2002 Rev. 4
1
Publication Order Number:
2N6667/D
2N6667
2N6668
PNP SILICON
DARLINGTON
POWER TRANSISTORS
10 AMPERES
6080 VOLTS
65 WATTS
CASE 221A09
TO220AB
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
1
2
3
4
2N6667 2N6668
http://onsemi.com
2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Case
R
JC
1.92
_
C/W
Thermal Resistance, Junction to Ambient
R
JA
62.5
_
C/W
*ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Sustaining Voltage (2)
2N6667
(IC = 200 mAdc, IB = 0)
2N6668
VCEO(sus)
60
80
--
--
Vdc
Collector Cutoff Current (VCE = 60 Vdc, IB = 0)
2N6667
(VCE = 80 Vdc, IB = 0)
2N6668
ICEO
--
--
1
1
mAdc
Collector Cutoff Current
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc)
2N6668
(VCE = 60 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6667
(VCE = 80 Vdc, VEB(off) = 1.5 Vdc, TC = 125
_
C)
2N6668
ICEX
--
--
--
--
300
300
3
3
Adc
mAdc
Emitter Cutoff Current (VBE = 5 Vdc, IC = 0)
IEBO
--
5
mAdc
ON CHARACTERISTICS (1)
DC Current Gain (IC = 5 Adc, VCE = 3 Vdc)
(IC = 10 Adc, VCE = 3 Vdc)
hFE
1000
100
20000
--
--
CollectorEmitter Saturation Voltage (IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VCE(sat)
--
--
2
3
Vdc
BaseEmitter Saturation Voltage(IC = 5 Adc, IB = 0.01 Adc)
(IC = 10 Adc, IB = 0.1 Adc)
VBE(sat)
--
--
2.8
4.5
Vdc
DYNAMIC CHARACTERISTICS
Current Gain -- Bandwidth Product (IC = 1 Adc, VCE = 5 Vdc, ftest = 1 MHz)
|hfe|
20
--
--
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1 MHz)
Cob
--
200
pF
SmallSignal Current Gain (IC = 1 Adc, VCE = 5 Vdc, f = 1 kHz)
hfe
1000
--
--
*Indicates JEDEC Registered Data
(2) Pulse Test: Pulse Width
v
300
s, Duty Cycle
v
2%.
Figure 2. Switching Times Test Circuit
0
VCC
- 30 V
SCOPE
TUT
+ 4.0 V
tr, tf v 10 ns
DUTY CYCLE = 1.0%
RC
D1, MUST BE FAST RECOVERY TYPES e.g.,
1N5825 USED ABOVE IB [ 100 mA
MSD6100 USED BELOW IB [ 100 mA
25
s
D1
51
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
V2
APPROX
+ 8 V
V1
APPROX
- 12 V
[ 8 k
[ 120
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0
RB
2N6667 2N6668
http://onsemi.com
3
t, TIME
(s)
80
40
20
0
20
40
80
100
120
160
Figure 3. Power Derating
T, TEMPERATURE (
C)
P D
, POWER DISSIP
A
TION (W
A
TTS)
60
TA TC
4
2
1
3
0
60
140
TA
TC
0.1
Figure 4. Typical Switching Times
IC, COLLECTOR CURRENT (AMPS)
5
0.7
0.3
0.2
0.2
10
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25
C
tf
1
5
ts
tr
0.1
1
3
0.5
2
.td
0.5
2
7
0.3
0.7
3
7
10
Figure 5. Thermal Response
t, TIME (ms)
1
0.01
0.01
0.5
0.3
0.2
0.1
0.05
0.03
0.02
0.02
r(t) NORMALIZED EFFECTIVE
TRANSIENT
THERMAL
RESIST
ANCE
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
1000
500
Z
JC(t) = r(t) R
JC
R
JC = 1.92
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) R
JC(t)
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
D = 0.5
SINGLE PULSE
0.05
0.1
0.02
0.01
0.2
BONDING WIRE LIMIT
THERMAL LIMIT @ TC = 25
C
SECOND BREAKDOWN LIMIT
20
1
Figure 6. Maximum Safe Operating Area
2
0.02
10
20
100
TJ = 150
C
0.2
5
0.5
I C
, COLLECT
OR CURRENT
(AMPS)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
50
1
0.1
dc
2
70
3
7
2N6667
2N6668
CURVES APPLY BELOW RATED VCEO
1 ms
100
s
5 ms
3
0.03
0.05
0.3
5
30
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 6 is based on TJ(pk) = 150_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
< 150
_C. TJ(pk) may be calculated from the data in Figure 5.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
2N6667 2N6668
http://onsemi.com
4
10,000
1
Figure 7. Typical SmallSignal Current Gain
f, FREQUENCY (kHz)
10
2
5
10
20
50
100 200
1000
500
100
5000
h FE
, SMALL-SIGNAL
CURENT
GAIN
20
200
500
2000
1000
50
TC = 25
C
VCE = 4 VOLTS
IC = 3 AMPS
300
0.1
Figure 8. Typical Capacitance
VR, REVERSE VOLTAGE (VOLTS)
30
1
2
5
20
100
10
C, CAP
ACIT
ANCE (pF)
200
100
70
50
Cib
Cob
50
0.2
0.5
TJ = 25
C
3
7
70
30
300
V CE
, COLLECT
OR-EMITTER VOL
T
AGE (VOL
TS)
0.1
Figure 9. Typical DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
0.2 0.3
0.5 0.7 1
2
10
500
300
h FE
, DC CURRENT
GAIN
TJ = 150
C
VCE = 3 V
200
7
20,000
5000
10,000
3000
2000
1000
3
5
Figure 10. Typical Collector Saturation Region
2.6
IB, BASE CURRENT (mA)
0.3
0.5
1
2
3
5
7
30
2.2
1.8
1.4
1
IC = 2 A
TJ = 25
C
4 A
6 A
0.6
0.7
20
10
TJ = - 55
C
7000
700
TJ = 25
C
IC, COLLECTOR CURRENT (AMPS)
VBE(sat) @ IC/IB = 250
V
,
VOL
T
AGE (VOL
TS)
Figure 11. Typical "On" Voltages
VCE(sat) @ IC/IB = 250
TJ = 25
C
VBE @ VCE = 3 V
0.1
0.2 0.3
0.5 0.7
1
2
10
7
3
5
3
2
1.5
1
0.5
Figure 12. Typical Temperature Coefficients
+3
+2
0
-1
-2
-3
+5
+4
+1
2.5
0.1
0.2 0.3
0.5 0.7
1
2
10
7
3
5
IC, COLLECTOR CURRENT (AMP)
V,
TEMPERA
TURE COEFFICIENTS (mV/
C)
-55
C to 25
C
25
C to 150
C
-55
C to 25
C
25
C to 150
C
VB for VBE
-4
-5
VC for VCE(sat)
hFE @ VCE + 3.0 V
3
*IC/IB
2N6667 2N6668
http://onsemi.com
5
105
Figure 13. Typical Collector CutOff Region
VBE, BASE-EMITTER VOLTAGE (VOLTS)
102
101
100
, COLLECT
OR CURRENT
(A)
I C
10-1
VCE = 30 V
TJ = 150
C
100
C
25
C
REVERSE
FORWARD
103
104
+0.2
+0.4
0 -0.2 -0.4 -0.6 -0.8
-1.2 -1.4
-1
+0.6
2N6667 2N6668
http://onsemi.com
6
PACKAGE DIMENSIONS
CASE 221A09
ISSUE AA
TO220
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION Z DEFINES A ZONE WHERE ALL
BODY AND LEAD IRREGULARITIES ARE
ALLOWED.
DIM
MIN
MAX
MIN
MAX
MILLIMETERS
INCHES
A
0.570
0.620
14.48
15.75
B
0.380
0.405
9.66
10.28
C
0.160
0.190
4.07
4.82
D
0.025
0.035
0.64
0.88
F
0.142
0.147
3.61
3.73
G
0.095
0.105
2.42
2.66
H
0.110
0.155
2.80
3.93
J
0.018
0.025
0.46
0.64
K
0.500
0.562
12.70
14.27
L
0.045
0.060
1.15
1.52
N
0.190
0.210
4.83
5.33
Q
0.100
0.120
2.54
3.04
R
0.080
0.110
2.04
2.79
S
0.045
0.055
1.15
1.39
T
0.235
0.255
5.97
6.47
U
0.000
0.050
0.00
1.27
V
0.045
---
1.15
---
Z
---
0.080
---
2.04
B
Q
H
Z
L
V
G
N
A
K
F
1 2 3
4
D
SEATING
PLANE
T
C
S
T
U
R
J
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
2N6667 2N6668
http://onsemi.com
7
Notes
2N6667 2N6668
http://onsemi.com
8
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make
changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any
particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be
validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death
may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC
and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that
SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4321 NishiGotanda, Shinagawaku, Tokyo, Japan 1410031
Phone: 81357402700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
2N6667/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: ONlit@hibbertco.com
N. American Technical Support: 8002829855 Toll Free USA/Canada
PDF 
ZIP